Relationship between corrosion and nanoscale friction on a metallic glass

• Haoran Ma and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2022, 13, 236–244, doi:10.3762/bjnano.13.18

• corrosive solution was added. For these experiments, we used an electrochemical atomic force microscope (ECAFM, Agilent 5500) and the oxidized tip (radius of ca. 30 nm) of a single-crystalline Si cantilever (PPP-CONT, NanoSensors, Germany). We adopted the beam geometry method to calibrate the force

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• keV Ga beams on a crystalline Si sample from different studies [44][45] are plotted and fitted by a double Gaussian for comparison in Figure 6. The near-axis resolution of the He beam from a GFIS is smaller than that of the LMIS-driven Ga FIB but the beam tails lead to a comparable behavior along the

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• were used for these experiments: The first substrate was single-crystalline Si(111) wafers of 25 × 25 × 0.525 mm3 in size. These wafers where chemically cleaned by the conventional Radio Corporation of America (RCA) etching processes, known as RCA 1 and RCA 2, to get hydrophilic silicon surfaces

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• , Germany 10.3762/bjnano.11.99 Abstract Tip-enhanced Raman spectroscopy is combined with polarization angle-resolved spectroscopy to investigate the nanometer-scale structural properties of core–shell silicon nanowires (crystalline Si core and amorphous Si shell), which were synthesized by platinum

• of the Raman peaks of crystalline Si and amorphous Si by applying tip-enhanced Raman spectroscopy, at sample positions being 8 nm apart. The local crystallinity revealed using confocal Raman spectroscopy and tip-enhanced Raman spectroscopy agrees well with the high-resolution transmission electron

• ratio between the crystalline Si and amorphous Si Raman peaks at sample positions as close as eight nanometers can be revealed. Furthermore, the polarizations of Raman scattering and photoluminescence signals locally emitted from a single SiNW are explored by combining polarization angle-resolved

Quantitative determination of the interaction potential between two surfaces using frequency-modulated atomic force microscopy

• Nicholas Chan,
• Carrie Lin,
• Tevis Jacobs,
• Robert W. Carpick and
• Philip Egberts

Beilstein J. Nanotechnol. 2020, 11, 729–739, doi:10.3762/bjnano.11.60

• and Si. No change in the distance between the SiOx and the crystalline Si is observed between tip (a) and (b). Topographic AFM image of the diamond surface showing the nanometer-scale roughness of the surface. Dashed lines show the grid on which the Δf–d curves were acquired. (a) 20 Δf–d curves

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• fragments of crystalline Si (c-Si) solar cells, have shown a tendency to overheat and underperform in efficiency (PCE) [2][3]. C-Si grids are also considered visually unappealing for solar windows [4]. Accordingly, thin film solar cells, even with lower PCE, are considered more promising for applications in

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• consists of core–shell NCs/NPs with the core being Ge-rich Si1−xGex NCs (crystallographic peak (111) position, shifts from 27.87° to 27.75° for MLs in as-grown and annealed at 800 °C states, respectively) surrounded by a shell of crystalline Si in amorphous SiGeO. This behavior can be explained by phase

• separation in the SiGe nanoparticles due to Ge segregation [34][35] at higher temperatures (i.e., Ge-rich SiGe core), which leaves a crystalline Si shell. A similar GIXRD diffractogram was observed by Tuğay et al. [6], for a comparable structure composed of SiGe NCs embedded in a SiO2 matrix fabricated via

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• any further sharp reflections, other than that of the crystalline Si. The amorphous nature of the carbon matrix was also confirmed with the help of Raman spectroscopy, as depicted in Figure 3c. Both Si/C composites, as well as the pure carbon matrix exhibit two bands at 1,345 cm−1 and 1,593 cm−1 that

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• (EVA) encapsulation (Figure 3). The front of the basic solar cell structure consists of transparent conductive oxide (e.g., indium tin oxide (ITO)), a thin p-doped and intrinsic amorphous silicon (a-Si:H) layer for electrical passivation, a slightly n-doped crystalline Si (c-Si) wafer (absorber), and

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• crystalline Si (Figure 7d). If the amorphous layer contained significant amounts of oxygen, it would appear brighter than the crystalline silicon. This was not the case and we conclude that the amorphization is a mechanical process that does not require oxidation to occur. Fourier transformation of the images

• the contact region. b) Detail of panel a) showing the amorphous Si with its sharp boundary to crystalline Si as well as crystallites (highlighted) in the Au layer. c) Close-up resolving the crystal lattice in the Au coating layer. The lattice distance was measured to be 2.4 Å. d) Detail of the

• amorphous layer (*) and the crystalline Si bulk with a lattice distance of 1.9 Å. Fourier transformations of the Au lattice in panel c) and the Si amorphous layer and the crystalline Si from panel d) are provided in the right part of the figure. Methods for activating the tip apices. The more controlled

Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

• Dmytro Solonenko,
• Ovidiu D. Gordan,
• Guy Le Lay,
• Dietrich R. T. Zahn and
• Patrick Vogt

Beilstein J. Nanotechnol. 2017, 8, 1357–1365, doi:10.3762/bjnano.8.137

• combination with the Raman results we conclude that these small structures are related to amorphous silicon (a-Si). This demonstrates that the Si deposition at low temperatures (≤150 °C) produces neither ordered 2D nor 3D crystalline Si structures. We can assume that the Si deposition at even lower

• formed. The fact that the intensity of the L(T)O phonon mode gets higher for deposition at 350 °C demonstrates that the sizes of the crystallites enlarge with increasing deposition temperatures. However, this temperature is still low compared to the growth temperature of crystalline Si, which usually

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• Supporting Information File 1). Substrates with Au(111) surfaces For the investigation of the SAMs with infrared spectroscopy and electron spectroscopy, single-crystalline Si(100) wafer (Wacker) pieces with evaporated gold layers were used as substrates. Metal deposition was carried out using a commercial

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• ) under conditions of an abundance of Si content, as established by the Fe–Si binary phase diagram [13]. It is well known that metal-containing particles located at the top of SiNWs are a distinctive feature of VLS-grown SiNWs, which occurs on crystalline Si substrates [14][15]. Hence, we argue that the

• crystalline Si substrate. Hence, we conclude that the VLS mechanism is responsible for the growth of short SiNWs in the above-described ICP process, provided that a small amount of Fe is present during the spheroidization process. In this way, the ICP technique can be seen as a prospect for the synthesis of

Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

• Gábor Y. Molnár,
• Shenouda S. Shenouda,
• Gábor L. Katona,
• Gábor A. Langer and
• Dezső L. Beke

Beilstein J. Nanotechnol. 2016, 7, 474–483, doi:10.3762/bjnano.7.41

• )/substrate, as well as Pd(30 nm)/Ag(30 nm)/substrate thin film systems were produced by magnetron sputtering onto single crystalline Si substrates with native SiO2 layers at room temperature. The base pressure in the sputtering chamber was below 2 × 10−5 Pa. During the deposition, the Ar (99.999%) pressure

Surface-enhanced Raman scattering by colloidal CdSe nanocrystal submonolayers fabricated by the Langmuir–Blodgett technique

• Alexander G. Milekhin,
• Larisa L. Sveshnikova,
• Tatyana A. Duda,
• Ekaterina E. Rodyakina,
• Volodymyr M. Dzhagan,
• Ovidiu D. Gordan,
• Sergey L. Veber,
• Cameliu Himcinschi,
• Alexander V. Latyshev and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 2388–2395, doi:10.3762/bjnano.6.245

• nanocluster array and the Cu grid. The Raman spectrum acquired from the area where CdSe NCs are deposited on the Si substrate reveals only features inherent to crystalline Si. However, the Raman spectra of CdSe NCs deposited on the nanocluster arrays (Figure 3a) reveal a pronounced peak at about 207.5 cm−1

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

• Valentin S. Teodorescu,
• Cornel Ghica,
• Adrian V. Maraloiu,
• Mihai Vlaicu,
• Andrei Kuncser,
• Magdalena L. Ciurea,
• Ionel Stavarache,
• Ana M. Lepadatu,
• Nicu D. Scarisoreanu,
• Andreea Andrei,
• Valentin Ion and
• Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

• to the laser wavelength or harmonics [27]. This happens at all wavelengths and pulse durations, as in the case of femtosecond laser irradiation [28]. The stress-induced periodic-ripples mechanism demonstrated for crystalline Si [29] could be used for amorphous materials if we define a stress yield

Combination of surface- and interference-enhanced Raman scattering by CuS nanocrystals on nanopatterned Au structures

• Alexander G. Milekhin,
• Nikolay A. Yeryukov,
• Larisa L. Sveshnikova,
• Tatyana A. Duda,
• Ekaterina E. Rodyakina,
• Victor A. Gridchin,
• Evgeniya S. Sheremet and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 749–754, doi:10.3762/bjnano.6.77

• substrate reveal only features corresponding to crystalline Si. However, a new relatively strong peak occurs in the Raman spectrum of CuS NCs on Au nanocluster arrays at 474 cm−1. This feature is related to the optical phonon mode in CuS NCs and manifests the SERS effect. For CuS NCs deposited on a SiO2

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• same material, for example crystalline Si nanodots in amorphous Si. Free-standing nanocrystals in vacuum can be modeled by using real-space boundary conditions, i.e., requiring the wavefunction to vanish far from the nanocrystal. An alternative approach is to impose periodic boundary conditions

• in crystalline Si, for instance by phosphorous or boron, to confer good electrical conductivity to an otherwise poor insulator. In the same way, doping NCs will play an analogous role in future artificial solids or meta-materials made of wave-function engineered particles. Although many promising

Nanoforging – Innovation in three-dimensional processing and shaping of nanoscaled structures

• Andreas Landefeld and
• Joachim Rösler

Beilstein J. Nanotechnol. 2014, 5, 1066–1070, doi:10.3762/bjnano.5.118

• axis [13]. The forging tools were machined by focused ion beam milling at the corner of a single crystalline Si-substrate. Varying tools in different positions were produced to allow several forging steps after each other (Figure 1). All of these tools are based on a spring principle similar to so

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

• Tobias Grünzel,
• Young Joo Lee,
• Karsten Kuepper and
• Julien Bachmann

Beilstein J. Nanotechnol. 2013, 4, 655–664, doi:10.3762/bjnano.4.73

• . However, no signal attributable to a crystalline Si phase can be seen. One possible explanation for the absence of 29Si NMR signal is the highly amorphous character of Si formed by the reduction reaction. Indeed, extremely broad 29Si NMR signals, which are very sensitive to the sample handling conditions

• contaminants. The Si 2p peak position of 102.2 eV (Figure 6b) unambiguously excludes a significant presence of either crystalline Si (99.3 eV) or SiO2 (103.3 eV) [25], in agreement with the 29Si NMR data. The peak position is compatible with amorphous silicon, the Si 2p XPS line of which has been found at a

Femtosecond-resolved ablation dynamics of Si in the near field of a small dielectric particle

• Paul Kühler,
• Daniel Puerto,
• Mario Mosbacher,
• Paul Leiderer,
• Francisco Javier Garcia de Abajo,
• Jan Siegel and
• Javier Solis

Beilstein J. Nanotechnol. 2013, 4, 501–509, doi:10.3762/bjnano.4.59

• “Rocasolano”, CSIC, Serrano 119, 28006 Madrid, Spain 10.3762/bjnano.4.59 Abstract In this work we analyze the ablation dynamics of crystalline Si in the intense near field generated by a small dielectric particle located at the material surface when being irradiated with an infrared femtosecond laser pulse

• after excitation. Keywords: crystalline Si; fs-resolved microscopy; laser ablation; near-field enhancement; ultrafast dynamics; Introduction The term “near field optics” is used to describe the phenomena associated to non-propagating and highly localized electromagnetic fields and their interaction

• ] which have found increasing applications in nano-structuring [7][8] and materials nano-fabrication [9][10]. As an example, Figure 1 shows a schematic 3D representation of the calculated intensity distribution at the surface of a crystalline Si wafer in the vicinity of a 7.9 μm-diameter SiO2 spherical

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires